Analysis of 20nm SOI MOSFET SRAM Design Using Different Gate Materials
Author(s) : I.FLAVIA PRINCESS NESAMANI, V.LAKSHMIPRABHA
Abstract
The SOI MOSFET technique is used to overcome the scaling effects. In this work, 20nm SOI MOSFET using Poly silicon as gate material of both N-type and P-type were designed. The same SOI MOSFET is designed using Molybdenum as gate material for both N-type and P-type and the device characteristics werecompared and analysed.
No fo Author(s) : 2
Page(s) : 34 - 38
Electronic ISSN : 2278 - 215x
Volume 2 :
Issue 2
Full Paper PDF
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