Journals Proceedings

International Journal of Advances in Electronics Engineering

Lumped RF Model of MOSFET Gate Resistance for GHz+ Frequencies Enhancement of Compact BSIM MOSFET Model

Author(s) : CHARLES HOGGATT, JAN DIVIN, JOSEF DOBES, STANISLAV BANAS, VACLAV PANKO

Abstract

This paper presents a lumped RF model of high voltage FET applicable for the frequency up to GHz range. Unlike the compact MOSFET model, the proposed solution contains not only parasitic capacitances and resistances but also parasitic inductance. The signal delay caused by relatively large device area including the parasitic resonance modeled by distributed RLC network is considered. The model is applicable in commercial SPICE simulators, e.g. Eldo, Spectre or HSpice.

No fo Author(s) : 5
Page(s) : 144 - 148
Electronic ISSN : 2278 - 215x
Volume 6 : Issue 1
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