Journals Proceedings

Abstract

Double Gate FinFET devices are suitable for nano electronic circuits due to better scalability, higher on-current (Ion), improved Sub-threshold Slope (SS) and undoped body (no random dopant fluctuation. Body thickness (TSi) increases the gate control over the channel resulting in reduced short channel effects (SCEs). Thin Tsi increases the quantum confinement of charge, resulting increased threshold-voltage (Vth), and hence, reduced performance. In this work, we have varied the process parameters like channel length (Lg)in presence of noise and analyzed various parameters. Significant variation in the noise spectral density has been observed, which is related to the random occurrence of excess Lorentzian components (1/f2-like nature) associated with generation–recombination (GR) noise.