International Journal of Advancements in Electronics and Electrical Engineering
Author(s) : W.KNAP
An overview of recent results concerning THz detection related to plasma nonlinearities in nanometer field effect transistors is presented. In particular nonlinearity and dynamic range of these detectors are discussed. We present also results on THz detection by Graphene field effect transistors. As a conclusion, we will show one of the first real world application of the FET THz detectors: a demonstrator of the imager developed for fast postal security imaging and wireless communication at carrier frequency above 300GHz.