International Journal of Advancements in Electronics and Electrical Engineering
Author(s) : ARDHENDU SAHA, SMITA BANIK, SUMITA DEB, UPAMA DAS
The simulated model calculates the phase matching angle for a parallel isotropic slab made of Zinc Telluride (ZnTe), Cadmium Telluride (CdTe), Gallium Arsenide (GaAs) and Zinc Selenide (ZnSe) having thickness ‘t’ at a given wavelength of 10.6 µm by determining the wave-vector mismatch. The model also generates the status of fulfillment of Total Internal Reflection (TIR) inside the semiconductor slab. The simulated results indicate phase matching angle of 0.9034 rad for a slab thickness of 800 µm in case of ZnTe and 0.5457 rad for CdTe taking the slab thickness as 500 µm. The phase matching angle for ZnSe is 1.481 rad and that of GaAs is 0.6984 rad for a slab of thickness 800 μm for both the materials. For all the cases, the TIR condition is found satisfying.