Journals Proceedings

Abstract

This paper present new simulation results on the effects produced by heavy-ion strikes on minimum-size (channel-length less than 32nm) MOSFET. The radiation-induced degradation of semiconductor device electrical parameters are reviewed. These results are related to the degradation of semiconductor-device performance on the variation of oxide thickness. Emphasis is placed on the effects of heavy-ion impact on MOS structures. The present degree of understanding of radiation effects in silicon devices is summarized.