International Journal of Advancements in Electronics and Electrical Engineering
Author(s) : LUBOMIR GRMELA, MAREK VONDRA, ONDREJ SIK, TOMAS TRCKA
Analysis electrical properties change of a semiconductor radiation detector, based on Cadmium-Telluride material has been carried out. The detector was exposed to temperature 100 °C for time period of 24 hours. Heat stress caused an increase of leakage currents by two orders. New defect energy levels caused difference in detector current transit, typical for the polarization effect. The noise spectral density of the detector after thermal stressing increases with the power of 6.81, which is significantly higher value than 2.70, measured before thermal stressing.