Journals Proceedings

Abstract

This paper is mainly showing the comparison between Field Plated and Non Field Plated AlGaN/GaN High Electron Mobility Transistor (HEMT) under different biasing conditions. It also shows the effect of the field plate structure on the RF performance of the HEMT device. The field plate structure increases the breakdown voltage of the device at high frequencies by the local modulation of the electric field. Because of the field plate there is introduction of additional feedback capacitance from drain to gate. This type of capacitor also has effect on the RF performance of the device, mainly at high frequency values. So here the investigation on the above along with the comparison with field plated and non field plated HEMT device is presented systematically.