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International Journal of Advancements in Electronics and Electrical Engineering

Design and Investigation of DC and Microwave Characteristics of InGaP/InGaAs/GaAs Dual Channel Pseudomorphic HEMT (DC-PHEMT)

Author(s) : A.K. PANDA, LIMALI SAHOO, MERYLEEN MOHAPATRA

Abstract

A InGaP/InGaAs/GaAs dual channel pseudomorphic HEMT (DC- PHEMT) with interesting triple doped sheets having gate length 800nm is modeled and simulated by using 2-dimensional simulation package ATLAS from Silvaco. Different DC and microwave performances of the above device are analyzed and investigated to judge the potential of the device for high- performance digital device applications. Due to the schottky behavior of InGaP, good pinch-off and saturation characteristics, high drain saturation current, large and linear transconductance and excellent microwave characteristics are obtained. The studied dual channel HEMT with delta-doped sheet densities and proper layers; prove promise for electronic applications.

No fo Author(s) : 3
Page(s) : 16 - 19
Electronic ISSN : 2319 - 7498
Volume 2 : Issue 3
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