Journals Proceedings

Abstract

Gallium Nitride (GaN)-based high electron mobility transistors (HEMTs) are emerging as promising contenders to replace existing Silicon and Gallium Arsenide (GaAs) devices in the radio-frequency/microwave power amplifiers and high-power switching applications. In this paper, the 2- D numerical simulations of AlGaN/GaN high electronmobility transistor (HEMT) were carried out and analyzed to investigate the transient current collapse phenomena. The coupling between trapping effect and thermal effect were taken into account in our simulation. The turn-on pulse gate-lag transient responses with different quiescent biases were obtained, and the pulsed current-voltage (I-V) curves were extracted from the transients. The experimental results of both gate-lag transient current and pulsed I-V curves were reproduced by the simulation. These study results will help more device researchers and circuit designers understand HEMT device physics and reliability design